Memory device

According to one embodiment, a memory device includes a substrate; a structure including a plurality of conductive layers stacked on the substrate; and a pillar arranged inside the structure and including a semiconductor layer that extends in a direction perpendicular to a surface of the substrate....

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Main Authors Hamada, Tatsufumi, Kuki, Tomohiro, Sotome, Shinichi, Oshima, Yasunori, Uchimura, Yasuhiro, Arisumi, Osamu
Format Patent
LanguageEnglish
Published 02.04.2024
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:According to one embodiment, a memory device includes a substrate; a structure including a plurality of conductive layers stacked on the substrate; and a pillar arranged inside the structure and including a semiconductor layer that extends in a direction perpendicular to a surface of the substrate. The semiconductor layer includes a first portion on a side of an upper portion of the structure, and a second portion between the first portion and the substrate. The first portion has a thickness larger than a thickness of the second portion.
Bibliography:Application Number: US202017106667