Memory device

According to one embodiment, a memory device includes a stacked structure including a plurality of conductive layers stacked to be apart from each other in a first direction, and a pillar structure including a resistance change portion extending in the first direction in the stacked structure, and a...

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Bibliographic Details
Main Authors Iizuka, Takahiko, Kawanaka, Shigeru, Kamata, Yoshiki, Morota, Misako, Asao, Yoshiaki, Nomura, Yukihiro, Takashima, Daisaburo
Format Patent
LanguageEnglish
Published 02.04.2024
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:According to one embodiment, a memory device includes a stacked structure including a plurality of conductive layers stacked to be apart from each other in a first direction, and a pillar structure including a resistance change portion extending in the first direction in the stacked structure, and a semiconductor portion which extends in the first direction in the stacked structure and which includes a first portion provided along the resistance change portion and a second portion extending from the first portion in at least one direction intersecting the first direction.
Bibliography:Application Number: US202217693935