Silicon-controlled rectifiers in a silicon-on-insulator technology

• Main Authors: Nath, Anindya, Pandey, Shesh Mani, Mitra, Souvick
• Format: Patent
• Language: English
• Published: 19.03.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Structures for a silicon-controlled rectifier and methods of forming a structure for a silicon-controlled rectifier. The structure comprises a semiconductor substrate, a dielectric layer on the semiconductor substrate, and a first well and a second well in the semiconductor substrate beneath the dielectric layer. The first well has a first conductivity type, the second well has a second conductivity type opposite to the first conductivity type, and the second well adjoins the first well along a p-n junction. The structure further comprises a first terminal and a second terminal above the dielectric layer, a first connection extending through the dielectric layer from the first terminal to the first well, and a second connection extending through the dielectric layer from the second terminal to the second well.