Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device includes forming a stack structure including a horizontal recess over a substrate, forming a blocking layer lining the horizontal recess, forming an interface control layer including a dielectric barrier element and a conductive barrier element over th...

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Bibliographic Details
Main Authors Eom, Hyeng-Woo, Yang, Young-Ho, Lee, Kwang-Wook, Shim, Jung-Myoung, Choi, Won-Joon
Format Patent
LanguageEnglish
Published 19.03.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for fabricating a semiconductor device includes forming a stack structure including a horizontal recess over a substrate, forming a blocking layer lining the horizontal recess, forming an interface control layer including a dielectric barrier element and a conductive barrier element over the blocking layer, and forming a conductive layer over the interface control layer to fill the horizontal recess.
Bibliography:Application Number: US202318156355