Method for manufacturing nitride semiconductor device
A method for manufacturing a nitride semiconductor device includes the steps of growing a GaN channel layer on an SiC substrate using a vertical MOCVD furnace set at a first temperature using H2 as a carrier gas, and TMG and NH3 as raw materials, holding the SiC substrate having the grown GaN channe...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
19.03.2024
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Subjects | |
Online Access | Get full text |
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Summary: | A method for manufacturing a nitride semiconductor device includes the steps of growing a GaN channel layer on an SiC substrate using a vertical MOCVD furnace set at a first temperature using H2 as a carrier gas, and TMG and NH3 as raw materials, holding the SiC substrate having the grown GaN channel layer in the MOCVD furnace set at a second temperature higher than the first temperature using H2 as a carrier gas, the MOCVD furnace being supplied with NH3, and growing an InAlN layer on the GaN channel layer using the MOCVD furnace set at a third temperature lower than the first temperature using N2 as a carrier gas, and TMI, TMA, and NH3 as raw materials. |
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Bibliography: | Application Number: US201917291575 |