Semiconductor device having a wall structure surrounding a stacked gate structure

A semiconductor device is provided. The semiconductor device includes a substrate, a stacked gate structure, and a wall structure. The stacked gate structure is on the substrate and extending along a first direction. The wall structure is on the substrate and laterally aside the stacked gate structu...

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Bibliographic Details
Main Authors Chuang, Chiang-Ming, Liao, Hung-Che, Lee, Chih-Ming, Liu, Chien-Hsuan, Chuang, Kun-Tsang, Chen, Hsin-Chi, Pan, Chia-Ming
Format Patent
LanguageEnglish
Published 05.03.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device is provided. The semiconductor device includes a substrate, a stacked gate structure, and a wall structure. The stacked gate structure is on the substrate and extending along a first direction. The wall structure is on the substrate and laterally aside the stacked gate structure. The wall structure extends along the first direction and a second direction perpendicular to the first direction. The stacked gate structure is overlapped with the wall structure in the first direction and the second direction.
Bibliography:Application Number: US202016740499