Semiconductor device for infrared detection, method of manufacturing semiconductor device for infrared detection and infrared detector

A semiconductor device for infrared detection comprises a stack of a first semiconductor layer, a second semiconductor layer and an optical coupling layer. The first semiconductor layer has a first type of conductivity and the second semiconductor layer has a second type of conductivity. The optical...

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Bibliographic Details
Main Authors Löffler, Bernhard, Fasching, Gernot, Meinhardt, Gerald, Jonak-Auer, Ingrid
Format Patent
LanguageEnglish
Published 05.03.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device for infrared detection comprises a stack of a first semiconductor layer, a second semiconductor layer and an optical coupling layer. The first semiconductor layer has a first type of conductivity and the second semiconductor layer has a second type of conductivity. The optical coupling layer comprises an optical coupler and at least a first lateral absorber region. The optical coupler is configured to deflect incident light towards the first lateral absorber region. The first lateral absorber region comprises an absorber material with a bandgap Eg in the infrared, IR.
Bibliography:Application Number: US202017620059