Semiconductor devices and methods of manufacturing thereof

A method of fabricating a semiconductor device is disclosed. The method includes forming semiconductor fins on a substrate. A first dummy gate is formed over the semiconductor fins. A recess is formed in the first dummy gate, and the recess is disposed between the semiconductor fins. A dummy fin mat...

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Bibliographic Details
Main Authors Kao, Kuei-Yu, Lin, Chih-Han, Chen, Chen-Ping, Lin, Shih-Yao, Lee, Hsiao Wen
Format Patent
LanguageEnglish
Published 05.03.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of fabricating a semiconductor device is disclosed. The method includes forming semiconductor fins on a substrate. A first dummy gate is formed over the semiconductor fins. A recess is formed in the first dummy gate, and the recess is disposed between the semiconductor fins. A dummy fin material is formed in the recess. A portion of the dummy fin material is removed to expose an upper surface of the first dummy gate and to form a dummy fin. A second dummy gate is formed on the exposed upper surface of the first dummy gate.
Bibliography:Application Number: US202217873978