Semiconductor structure with extended contact structure

Semiconductor structures are provided. The semiconductor structure includes a substrate and nanostructures formed over the substrate. The semiconductor structure further includes a gate structure surrounding the nanostructures and a source/drain structure attached to the nanostructures. The semicond...

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Main Authors Chen, I-Sheng, Lin, Ta-Chun, Pan, Kuo-Hua, Cheng, Chao-Ching, Chen, Tzu-Chiang, Yeong, Sai-Hooi, Huang, Shih-Syuan, Liaw, Jhon-Jhy, Chiang, Hung-Li
Format Patent
LanguageEnglish
Published 05.03.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Semiconductor structures are provided. The semiconductor structure includes a substrate and nanostructures formed over the substrate. The semiconductor structure further includes a gate structure surrounding the nanostructures and a source/drain structure attached to the nanostructures. The semiconductor structure further includes a contact formed over the source/drain structure and extending into the source/drain structure.
Bibliography:Application Number: US202217666051