Silicon wafer for an electronic component and method for the production thereof

A silicon wafer for an electronic component, having an epitaxially grown silicon layer on a carrier substrate and the silicon layer is removed as a silicon wafer from the carrier substrate, in which at least one p-dopant and at least one n-dopant are introduced into the silicon layer during the epit...

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Bibliographic Details
Main Authors Schillinger, Kai, Reber, Stefan, Siebke, Frank
Format Patent
LanguageEnglish
Published 27.02.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A silicon wafer for an electronic component, having an epitaxially grown silicon layer on a carrier substrate and the silicon layer is removed as a silicon wafer from the carrier substrate, in which at least one p-dopant and at least one n-dopant are introduced into the silicon layer during the epitaxial growth. The dopants are introduced into the silicon layer such that the silicon layer is formed having an electrically active p-doping and an electrically active n-doping, each greater than 1×1014 cm−3.
Bibliography:Application Number: US202117205720