Method of making decoupling capacitor

A method includes implanting a first dopant having a first dopant type into a substrate to define a plurality of source/drain (S/D) regions. The method further includes implanting a second dopant having the first dopant type into the substrate to define a channel region between adjacent S/D regions...

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Bibliographic Details
Main Authors Horng, Jaw-Juinn, Liu, Szu-Lin
Format Patent
LanguageEnglish
Published 13.02.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method includes implanting a first dopant having a first dopant type into a substrate to define a plurality of source/drain (S/D) regions. The method further includes implanting a second dopant having the first dopant type into the substrate to define a channel region between adjacent S/D regions of the plurality of S/D regions, wherein a dopant concentration of the second dopant in the channel region is less than half of a dopant concentration of the first dopant in each of the plurality of S/D regions. The method further includes forming a gate stack over the channel region. The method further includes electrically coupling each of the plurality of S/D regions together.
Bibliography:Application Number: US202217850636