Method of breaking through etch stop layer

A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where et...

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Bibliographic Details
Main Authors Lin, Chun-Neng, Wang, Yu-Shih, Chiu, U-Ting, Huang, Kuo-Bin, Yeh, Po-Nan, Yang, Hong-Jie, Lee, Chia-Ying, Yeh, Ming-Hsi
Format Patent
LanguageEnglish
Published 13.02.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.
Bibliography:Application Number: US202217670990