Method for forming storage node contact structure and semiconductor structure

A method for forming a storage node contact structure and semiconductor structure are provided. The method includes providing a substrate having a surface on which bit line structures are formed; forming a groove at a part, corresponding to an active region, of bottom of the contact hole; and growin...

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Bibliographic Details
Main Authors Zhang, Lingguo, Ping, Erxuan, Bai, Weiping, Zhou, Zhen
Format Patent
LanguageEnglish
Published 09.01.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A method for forming a storage node contact structure and semiconductor structure are provided. The method includes providing a substrate having a surface on which bit line structures are formed; forming a groove at a part, corresponding to an active region, of bottom of the contact hole; and growing a silicon crystal from the groove in the contact hole by using an epitaxial growth process, and controlling growth rates of the silicon crystal in a first and second directions in a growth process to enable the growth rate of the silicon crystal in the first direction to be greater than the growth rate of the silicon crystal in the second direction at beginning of growth and enable the growth rate of the silicon crystal in the first direction to be equal to the growth rate of the silicon crystal in the second direction at end of the growth.
Bibliography:Application Number: US202117522281