Method for manufacturing semiconductor structure and semiconductor structure

• Main Authors: Chen, Yang, Cheng, Mingxia
• Format: Patent
• Language: English
• Published: 09.01.2024
• Subjects: ELECTRICITY; INFORMATION STORAGE; PHYSICS; STATIC STORES

The application provides a method for manufacturing a semiconductor structure and the semiconductor structure, and relates to the technical field of semiconductors. The method for manufacturing the semiconductor structure includes: providing a base; sequentially stacking an initial conductive layer, an initial first dielectric layer, an initial first mask layer, an initial second dielectric layer, an initial second mask layer and a photoresist layer with a pattern on the base; and etching part of the initial second mask layer, part of the initial second dielectric layer and part of the initial first mask layer by taking the photoresist layer as a mask, so as to form a second dielectric layer with a trapezoidal structure which is of a structure with small top and large bottom.