Semiconductor laser and method of production for optoelectronic semiconductor parts

In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, p...

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Main Authors Auen, Karsten, Singer, Frank, Hüttinger, Roland, König, Harald, Sorg, Jörg Erich, Brunner, Herbert, Lell, Alfred, Peskoller, Florian, Schulz, Roland
Format Patent
LanguageEnglish
Published 09.01.2024
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 μm. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.
Bibliography:Application Number: US202217971156