Field effect transistor having field plate

A field effect transistor having a field plate structure for shaping an electric field in a region between the gate and the drain, such field plate structure having: a dielectric layer disposed on gate and on the surface of the semiconductor in the region between gate and the drain; and electric cha...

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Bibliographic Details
Main Authors Appleton, Jr., Brian T, Davis, Michael S, Chumbes, Eduardo M
Format Patent
LanguageEnglish
Published 02.01.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A field effect transistor having a field plate structure for shaping an electric field in a region between the gate and the drain, such field plate structure having: a dielectric layer disposed on gate and on the surface of the semiconductor in the region between gate and the drain; and electric charge disposed in portions of the dielectric layer, a portion of such charge being disposed in the dielectric layer over an upper surface of the gate and another portion of the change extending from the upper surface of the gate into the region between gate and the drain; and wherein the electric charge solely produces the electric field.
Bibliography:Application Number: US201916671438