Wafer and method of manufacturing wafer

The wafer having a retardation distribution measured with a light having a wavelength of 520 nm, wherein an average value of the retardation is 38 nm or less, wherein the wafer comprises a micropipe, and wherein a density of the micropipe is 1.5/cm2 or less, is disclosed.

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Bibliographic Details
Main Authors Choi, Jung Woo, Kim, Jung-Gyu, Ku, Kap-Ryeol, Park, Jong Hwi, Kyun, Myung-Ok
Format Patent
LanguageEnglish
Published 02.01.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:The wafer having a retardation distribution measured with a light having a wavelength of 520 nm, wherein an average value of the retardation is 38 nm or less, wherein the wafer comprises a micropipe, and wherein a density of the micropipe is 1.5/cm2 or less, is disclosed.
Bibliography:Application Number: US202217665166