Ion implantation method and device

An ion implantation system comprising: a sample platform; an ion gun; an electrostatic linear accelerator; a direct current (DC) final energy magnet (FEM); and a processor. The processor is programmed to control: a wafer acceptance test instrument, a DC recipe calculator, a DC real energy calculator...

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Bibliographic Details
Main Authors Lin, Yi-Hsiung, Yeh, Yao-Jen, Lee, Cheng-En, Ou, Chia-Lin, Liu, Hsuan-Pang
Format Patent
LanguageEnglish
Published 02.01.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An ion implantation system comprising: a sample platform; an ion gun; an electrostatic linear accelerator; a direct current (DC) final energy magnet (FEM); and a processor. The processor is programmed to control: a wafer acceptance test instrument, a DC recipe calculator, a DC real energy calculator, and a tool energy shift verifier. The wafer acceptance test instrument is configured to apply a wafer acceptance test (WAT) recipe to a test sample on the sample platform. The DC recipe calculator is configured to calculate a recipe for the DC FEM. The DC real energy calculator is configured to calculate a real energy of the DC FEM. The tool energy shift verifier is configured to verify a tool energy shift of the DC FEM. The ion implantation system is configured to tune the DC FEM based on the verified tool energy shift, and obtain a peak magnetic field of the DC FEM.
Bibliography:Application Number: US202117516426