Etch method for interconnect structure

A method for making a middle-of-line interconnect structure in a semiconductor device includes forming, near a surface of a first interconnect structure comprised of a first metal, a region of varied composition including the first metal and a second element. The method further includes forming a re...

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Bibliographic Details
Main Authors Lin, Chun-Neng, Chuang, Ying-Liang, Huang, Kuo-Bin, Huang, Yu-Fang, Chen, Kuo-Ju, Yeh, Ming-Hsi, Chou, Chun-Cheng
Format Patent
LanguageEnglish
Published 26.12.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for making a middle-of-line interconnect structure in a semiconductor device includes forming, near a surface of a first interconnect structure comprised of a first metal, a region of varied composition including the first metal and a second element. The method further includes forming a recess within the region of varied composition. The recess laterally extends a first distance along the surface and vertically extends a second distance below the first surface. The method further includes filling the recess with a second metal to form a second interconnect structure that contacts the first interconnect structure.
Bibliography:Application Number: US202117461001