Scalable patterning through layer expansion process and resulting structures

Small sized and closely pitched features can be formed by patterning a layer to have holes therein and then expanding the layer so that the holes shrink. If the expansion is sufficient to pinch off the respective holes, multiple holes can be formed from one larger hole. Holes smaller and of closer p...

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Bibliographic Details
Main Authors Lee, Kai-Hsuan, Yeong, Sai-Hooi, Chui, Chi On
Format Patent
LanguageEnglish
Published 26.12.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Small sized and closely pitched features can be formed by patterning a layer to have holes therein and then expanding the layer so that the holes shrink. If the expansion is sufficient to pinch off the respective holes, multiple holes can be formed from one larger hole. Holes smaller and of closer pitch than practical or possible may be obtained in this way. One process for expanding the layer includes implanting a dopant species having a larger average atomic spacing than does the material of the layer.
Bibliography:Application Number: US202117329068