Curved semiconductor and method of forming the same

A method of forming a curved semiconductor includes: forming a device layer on a semiconductor substrate; forming a metal layer on the device layer; removing the semiconductor substrate from the device layer; and curving the device layer and the metal layer.

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Bibliographic Details
Main Authors McKnight, Geoffrey P, Gurga, Alexander R, Keefe, Andrew C, Freeman, Ryan
Format Patent
LanguageEnglish
Published 19.12.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of forming a curved semiconductor includes: forming a device layer on a semiconductor substrate; forming a metal layer on the device layer; removing the semiconductor substrate from the device layer; and curving the device layer and the metal layer.
Bibliography:Application Number: US201916389238