Phase-change memory device for improving resistance drift and dynamic resistance drift compensation method of the same
A phase-change memory device and a dynamic resistance drift compensation method thereof are provided. The phase-change memory device includes a plurality of bit lines; a plurality of source lines crossing the plurality of bit lines; a plurality of memory cells at respective intersections between the...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
19.12.2023
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Subjects | |
Online Access | Get full text |
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Summary: | A phase-change memory device and a dynamic resistance drift compensation method thereof are provided. The phase-change memory device includes a plurality of bit lines; a plurality of source lines crossing the plurality of bit lines; a plurality of memory cells at respective intersections between the plurality of bit lines and the plurality of source lines, the plurality of memory cells each including a phase-change layer; a current generator connected to the plurality of bit lines and configured to generate a set current to be supplied to each of the plurality of memory cells; and a control driver configured to control the current generator and the plurality of bit lines to supply the set current to each of the plurality of memory cells. |
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Bibliography: | Application Number: US202217857581 |