Method of forming a GaN sensor having a controlled and stable threshold voltage in the sensing area

• Main Authors: Strul, Roy, Roizin, Yakov, Sergienko, Anatoly, Gilad, Ido, Sirkis, Alex, Shima-Edelstein, Ruth, Shaul, Ronen, Poliak, Liz
• Format: Patent
• Language: English
• Published: 12.12.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method fabricating a GaN based sensor including: forming a gate dielectric layer over a GaN hetero-structure including a GaN layer formed over a substrate and a first barrier layer formed over the GaN layer; forming a first mask over the gate dielectric layer; etching the gate dielectric layer and the first barrier layer through the first mask, thereby forming source and drain contact openings; removing the first mask; forming a metal layer over the gate dielectric layer, wherein the metal layer extends into the source and drain contact openings; forming a second mask over the metal layer; etching the metal layer, the gate dielectric layer and the GaN heterostructure through the second mask, wherein a region of the GaN heterostructure is exposed; and thermally activating the metal layer in the source and drain contact openings. The gate dielectric may exhibit a sloped profile, and dielectric spacers may be formed.