Wafer level lens

The present technology relates to an imaging element, a method of manufacturing the imaging element, and an electronic apparatus that make it possible to suppress generation of a void in an infrared cutoff filter layer. The imaging element includes: a light receiving sensor that performs photoelectr...

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Bibliographic Details
Main Author Natori, Taichi
Format Patent
LanguageEnglish
Published 05.12.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:The present technology relates to an imaging element, a method of manufacturing the imaging element, and an electronic apparatus that make it possible to suppress generation of a void in an infrared cutoff filter layer. The imaging element includes: a light receiving sensor that performs photoelectric conversion of incoming light; a cover glass that protects a top surface side serving as a light incidence surface of the light receiving sensor; a frame that is disposed in an outer peripheral portion between the light receiving sensor and the cover glass, and is formed with use of an inorganic material; and an infrared cutoff filter layer that is formed on an inner side on a same plane as the frame. The present technology is applicable to, for example, an imaging element having a CSP structure, and the like.
Bibliography:Application Number: US202217703754