Stacked structure including semiconductor structure and method of manufacturing the same

A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer...

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Bibliographic Details
Main Authors Shin, Hyun Eok, So, Byung Soo, Cho, Mann Ho, Kim, Hyeon Sik, Lee, Ju Hyun, Jeong, Kwang Sik
Format Patent
LanguageEnglish
Published 05.12.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a stacked structure includes forming a first metal buffer layer including crystal grains on a base substrate, forming a second metal buffer material layer on the first metal buffer layer, and crystallizing the second metal buffer material layer to form a second metal buffer layer, wherein the second metal buffer material layer includes crystal grains, and a density of the crystal grains of the second metal buffer material layer is lower than a density of the crystal grains of the first metal buffer layer.
Bibliography:Application Number: US202117469279