Bias temperature instability correction in memory arrays

A method of correcting bias temperature instability in memory arrays may include applying a first bias to a memory cell, where the memory cell may include a memory element and a select element, and the first bias may causes a value to be stored in the memory element. The first bias causes a bias tem...

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Bibliographic Details
Main Authors Krishnan, Siddarth, Chevallier, Christophe J
Format Patent
LanguageEnglish
Published 05.12.2023
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A method of correcting bias temperature instability in memory arrays may include applying a first bias to a memory cell, where the memory cell may include a memory element and a select element, and the first bias may causes a value to be stored in the memory element. The first bias causes a bias temperature instability (BTI) associated with the memory cell to increase. The method may also include applying a second bias to the memory cell, where the second bias may have a polarity that is opposite of the first bias, and the value stored in the memory element remains in the memory element after the second bias is applied. The second bias may also cause the BTI associated with the memory cell to decrease while maintaining any value stored in the memory cell.
Bibliography:Application Number: US202117408429