Resistive memory elements with an embedded heating electrode

Structures for a resistive memory element and methods of forming a structure for a resistive memory element. A resistive memory element has a first electrode, a second electrode partially embedded in the first electrode, a third electrode, and a switching layer positioned between the first electrode...

Full description

Saved in:
Bibliographic Details
Main Authors Hsieh, Curtis Chun-I, Tan, Juan Boon, Lee, Calvin
Format Patent
LanguageEnglish
Published 28.11.2023
Subjects
ELECTRICITY
Online AccessGet full text

Cover

More Information
Summary:Structures for a resistive memory element and methods of forming a structure for a resistive memory element. A resistive memory element has a first electrode, a second electrode partially embedded in the first electrode, a third electrode, and a switching layer positioned between the first electrode and the third electrode. The second electrode includes a tip positioned in the first electrode adjacent to the switching layer and a sidewall that tapers to the tip.
Bibliography:Application Number: US202117467966