Integrated circuit including bipolar transistors

The disclosure relates to integrated circuits and methods including one or more rows of transistors. In an embodiment, an integrated circuit includes a row of bipolar transistors including a plurality of first conduction regions, a second conduction region, and a common base between the first conduc...

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Bibliographic Details
Main Authors Fagot, Jean Jacques, Weber, Olivier, Souchier, Emeline, Boivin, Philippe, Petitprez, Emmanuel
Format Patent
LanguageEnglish
Published 14.11.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The disclosure relates to integrated circuits and methods including one or more rows of transistors. In an embodiment, an integrated circuit includes a row of bipolar transistors including a plurality of first conduction regions, a second conduction region, and a common base between the first conduction regions and the second conduction region. An insulating trench is in contact with each bipolar transistor of the row of bipolar transistors. A conductive layer is on the insulating trench and the common base between the first conduction regions. A spacer layer is between the conductive layer and the first conduction regions.
Bibliography:Application Number: US202117489425