Program dependent biasing of unselected sub-blocks

An apparatus includes a control circuit configured to connect to first word lines of a first vertical sub-block and second word lines of a second vertical sub-block. The first vertical sub-block and the second vertical sub-block include memory cells connected in series in NAND strings, each NAND str...

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Bibliographic Details
Main Authors Dutta, Deepanshu, Hemink, Gerrit Jan, Yang, Xiang
Format Patent
LanguageEnglish
Published 24.10.2023
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:An apparatus includes a control circuit configured to connect to first word lines of a first vertical sub-block and second word lines of a second vertical sub-block. The first vertical sub-block and the second vertical sub-block include memory cells connected in series in NAND strings, each NAND string including memory cells coupled to the first word lines in series with memory cells connected to the second word lines. The control circuit is configured to program or sense memory cells along a selected first word line of the first vertical sub-block while applying a first voltage to second word lines that are connected to programmed memory cells and applying a second voltage to second word lines that are connected to unprogrammed memory cells.
Bibliography:Application Number: US202117469016