Resistive memory
A resistive memory including a substrate, a first electrode, a second electrode, a resistance changeable layer and an oxygen reservoir layer is provided. The first electrode is located on the substrate. The second electrode is located between the first electrode and the substrate. The resistance cha...
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| Main Authors | , , |
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| Format | Patent |
| Language | English |
| Published |
17.10.2023
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| Subjects | |
| Online Access | Get full text |
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| Summary: | A resistive memory including a substrate, a first electrode, a second electrode, a resistance changeable layer and an oxygen reservoir layer is provided. The first electrode is located on the substrate. The second electrode is located between the first electrode and the substrate. The resistance changeable layer is located between the first electrode and the second electrode. The oxygen reservoir layer is located between the first electrode and the resistance changeable layer. The oxygen reservoir layer includes a first portion, a second portion and a third portion. The second portion is connected to one side of the first portion. The third portion is connected to the other side of the first portion. A thickness of the first portion is greater than a thickness of the second portion and a thickness of the third portion. The first portion of the oxygen reservoir layer protrudes toward the first electrode. |
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| Bibliography: | Application Number: US202117329156 |