One-time programmable memory device

A semiconductor device includes a substrate having an input/output (I/O) region, an one time programmable (OTP) capacitor region, and a core region, a first metal gate disposed on the I/O region, a second metal gate disposed on the core region, and a third metal gate disposed on the OTP capacitor re...

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Bibliographic Details
Main Authors Lin, Chun-Hsien, Lee, Kuo-Hsing, Hsueh, Sheng-Yuan
Format Patent
LanguageEnglish
Published 03.10.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a substrate having an input/output (I/O) region, an one time programmable (OTP) capacitor region, and a core region, a first metal gate disposed on the I/O region, a second metal gate disposed on the core region, and a third metal gate disposed on the OTP capacitor region. Preferably, the first metal gate includes a first high-k dielectric layer, the second metal gate includes a second high-k dielectric layer, and the first high-k dielectric layer and the second high-k dielectric layer include an I-shape.
Bibliography:Application Number: US202117329171