Silicon-controlled rectifiers for an electrostatic discharge protection device

• Main Authors: Karalkar, Sagar Premnath, Paul, Milova, Mitra, Souvick, Zeng, Jie
• Format: Patent
• Language: English
• Published: 03.10.2023
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Structures for a silicon-controlled rectifier and methods of forming a structure for a silicon-controlled rectifier. The structure includes first and second wells in the semiconductor substrate, a first terminal including a first doped region in the first well, and a second terminal including a second doped region in the second well. The first well and the second doped region have a first conductivity type, and the second well and the first doped region have a second conductivity type opposite to the first conductivity type. First and second conductor layers are positioned on the semiconductor substrate. The first conductor layer partially overlaps with the first well, and the second conductor layer partially overlaps with the second well. A third doped region, which has the second conductivity type, is laterally positioned in the semiconductor substrate between the first and second conductor layers.