Sense amplifier and semiconductor memory device including the sense amplifier

• Main Authors: Ryu, Myeong Sik, Kim, Dong Geon, Baek, In Seok, Kim, Kyoung Min, Lee, Seok Jae, Won, Bok-Yeon
• Format: Patent
• Language: English
• Published: 03.10.2023
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

A sense amplifier includes a bit line sense amplifier including a first transistor and a second transistor spaced apart from each other in a first direction, a second conductive line configured to electrically connect the first transistor to the second transistor and extending in the first direction and a local sense amplifier configured to at least partially overlap the second conductive line and disposed between the first transistor and the second transistor. The local sense amplifier includes an active region, a plurality of gate patterns at least partially extending in the first direction and disposed on the active region, a first contact disposed between the plurality of gate patterns and including a long side extending in the first direction and a short side extending in a second direction crossing the first direction and a first conductive line electrically connected to the first contact while overlapping the first contact in a plan view and including a first conductive region extending in the first direction.