Magnetoresistance effect element and magnetic memory

A magnetoresistance effect element with a small element size can be provided which achieves both an increase in a thermal stability factor Δ and a reduction in a writing current IC0 and which improves a performance index Δ/IC0(μA−1) obtained by dividing the thermal stability factor Δ by the writing...

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Bibliographic Details
Main Authors Sato, Hideo, Endoh, Tetsuo, Ikeda, Shoji, Miura, Sadahiko, Honjo, Hiroaki
Format Patent
LanguageEnglish
Published 19.09.2023
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A magnetoresistance effect element with a small element size can be provided which achieves both an increase in a thermal stability factor Δ and a reduction in a writing current IC0 and which improves a performance index Δ/IC0(μA−1) obtained by dividing the thermal stability factor Δ by the writing current IC0. The magnetoresistance effect element includes a first reference layer (B1), a first junction layer (11), a first magnetic layer (21), a first non-magnetic coupling layer (31), a second magnetic layer (22), and a second junction layer (12), and a film thickness of the first non-magnetic coupling layer (31) is 0.1 nm or more and 0.3 nm or less.
Bibliography:Application Number: US201917264655