Semiconductor device, inverter circuit, drive device, vehicle, and elevator

A semiconductor device according to an embodiment includes: a silicon carbide layer having a first plane parallel to a first direction and a second direction orthogonal to the first direction, and a second plane facing the first plane, the silicon carbide layer including a first trench and a second...

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Bibliographic Details
Main Authors Harada, Shinsuke, Kimoto, Shinichi, Iijima, Ryosuke
Format Patent
LanguageEnglish
Published 19.09.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device according to an embodiment includes: a silicon carbide layer having a first plane parallel to a first direction and a second direction orthogonal to the first direction, and a second plane facing the first plane, the silicon carbide layer including a first trench and a second trench extending in the first direction; a gate electrode in the first trench and the second trench; a gate insulating layer; a gate wiring extending in the second direction, intersecting with the first trench and the second trench, connected to the gate electrode; a first electrode; a second electrode; and an interlayer insulating layer provided between the gate electrode and the first electrode. Neither the gate electrode nor the gate wiring is present between an end of the first trench in the first direction and the interlayer insulating layer.
Bibliography:Application Number: US202117447003