Ruthenium liner and cap for back-end-of-line applications

Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive l...

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Bibliographic Details
Main Authors Tang, Xianmin, Chen, Lu, Xu, Wenjing, Wu, Zhiyuan, Ha, Tae Hong, Chen, Feng
Format Patent
LanguageEnglish
Published 19.09.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Electronic devices and methods of forming electronic devices using a ruthenium or doped ruthenium liner and cap layer are described. A liner with a ruthenium layer and a cobalt layer is formed on a barrier layer. A conductive fill forms a second conductive line in contact with the first conductive line.
Bibliography:Application Number: US202117383361