Semiconductor device and method for fabricating the same

A method for fabricating semiconductor device includes the steps of first providing a substrate having a first region and a second region, forming a first bottom barrier metal (BBM) layer on the first region and the second region, forming a first work function metal (WFM) layer on the first BBM laye...

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Main Authors Wu, Zhen, Wu, Chih-Chiang, Chou, Shih-Min, Chen, Ti-Bin, Huang, Wen-Yen, Li, Yi-Fan, Ho, Nien-Ting
Format Patent
LanguageEnglish
Published 12.09.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for fabricating semiconductor device includes the steps of first providing a substrate having a first region and a second region, forming a first bottom barrier metal (BBM) layer on the first region and the second region, forming a first work function metal (WFM) layer on the first BBM layer on the first region and the second region, and then forming a diffusion barrier layer on the first WFM layer.
Bibliography:Application Number: US202217709385