Method for manufacturing semiconductor device

A method includes forming an implanted region in a substrate. The implanted region is adjacent to a top surface of the substrate. A clean treatment is performed on the top surface of the implanted region. The top surface of the implanted region is baked after the clean treatment. An epitaxial layer...

Full description

Saved in:
Bibliographic Details
Main Authors Yu, Ming-Hua, Lin, Che-Yu, Yang, Chan-Lon, Lee, Tze-Liang
Format Patent
LanguageEnglish
Published 05.09.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method includes forming an implanted region in a substrate. The implanted region is adjacent to a top surface of the substrate. A clean treatment is performed on the top surface of the implanted region. The top surface of the implanted region is baked after the clean treatment. An epitaxial layer is formed on the top surface of the substrate. The epitaxial layer is patterned to form a fin.
Bibliography:Application Number: US202017074287