Real time photoresist outgassing control system and method

A system and method for controlling an amount of outgassing caused by implanting ions into a photoresist disposed on a workpiece. The amount of outgassing is based on the species being implanted, the type of photoresist, the energy of the implant, and the amount of dose that has already been implant...

Full description

Saved in:
Bibliographic Details
Main Authors Timberlake, David Roger, Clay, Nevin, Campbell, Christopher W
Format Patent
LanguageEnglish
Published 05.09.2023
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:A system and method for controlling an amount of outgassing caused by implanting ions into a photoresist disposed on a workpiece. The amount of outgassing is based on the species being implanted, the type of photoresist, the energy of the implant, and the amount of dose that has already been implanted, among other effects. By controlling the effective beam current, the amount of outgassing may be maintained below a predetermined threshold. By developing and utilizing the relationship between effective beam current, dose completed and rate of outgassing, the effective beam current may be controlled more precisely to implant the workpiece in the most efficient manner while remaining below the predetermined outgassing threshold.
Bibliography:Application Number: US202217582655