Semiconductor apparatus including a phase change material layer having a first and a second chalcogen layer

Semiconductor unit devices may be arranged between a first insulating layer and a second insulating layer that are apart from each other in a direction normal to a substrate. Each of the semiconductor unit devices may include a selection device layer and a phase change material layer that extend sid...

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Bibliographic Details
Main Authors Yang, Kiyeon, Lee, Changseung, Ahn, Dongho
Format Patent
LanguageEnglish
Published 29.08.2023
Subjects
ELECTRICITY
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Summary:Semiconductor unit devices may be arranged between a first insulating layer and a second insulating layer that are apart from each other in a direction normal to a substrate. Each of the semiconductor unit devices may include a selection device layer and a phase change material layer that extend side by side in a direction parallel to the substrate. The phase change material layer may have a superlattice-like structure. The phase change material layer may be arranged along a recess portion that is formed by the first insulating layer, the second insulating layer, and the selection device layer.
Bibliography:Application Number: US202117330950