Semiconductor structure and method for forming the same

A method for forming a semiconductor structure includes providing a substrate including a first region with a first gate structure and a second region with a second gate structure. First to third dielectric layers are formed on the substrate. The third dielectric layer is patterned to form a first p...

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Main Authors Li, Jing-Da, Tan, Hung-Chih, Liao, Chih-Cherng, Kan, Kai-Chuan, Yang, Hsiao-Ying, Liu, Hsing-Chao
Format Patent
LanguageEnglish
Published 29.08.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for forming a semiconductor structure includes providing a substrate including a first region with a first gate structure and a second region with a second gate structure. First to third dielectric layers are formed on the substrate. The third dielectric layer is patterned to form a first portion in the first region and a second portion in the second region. The second region is covered and at least a portion of the first portion is removed to form a first mask. The second dielectric layer is pattern by using the first mask and the second portion as the second mask to expose a portion of the first dielectric layer. The portion of the first dielectric layer is removed to form a first stacked spacer on the first gate structure and a second stacked spacer on the second gate structure.
Bibliography:Application Number: US202117323418