3D semiconductor device and structure with single-crystal layers

A 3D semiconductor device, the device comprising: a first level comprising a first single crystal layer, said first level comprising first transistors, wherein each of said first transistors comprises a single crystal channel; first metal layers interconnecting at least said first transistors; a sec...

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Bibliographic Details
Main Authors Or-Bach, Zvi, Sekar, Deepak C, Cronquist, Brian
Format Patent
LanguageEnglish
Published 22.08.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A 3D semiconductor device, the device comprising: a first level comprising a first single crystal layer, said first level comprising first transistors, wherein each of said first transistors comprises a single crystal channel; first metal layers interconnecting at least said first transistors; a second metal layer overlaying said first metal layers; and a second level comprising a second single crystal layer, said second level comprising second transistors, wherein said second level overlays said first level, wherein at least one of said second transistors comprises a gate all around structure, wherein said second level is directly bonded to said first level, and wherein said bonded comprises direct oxide to oxide bonds.
Bibliography:Application Number: US202218088602