Semiconductor device under bump structure and method therefor
A method of manufacturing a semiconductor device is provided. The method includes depositing a non-conductive layer over a semiconductor die. An opening is formed in the non-conductive layer exposing a portion of a bond pad of the semiconductor die. A cavity is in the non-conductive layer with a por...
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| Main Authors | , , |
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| Format | Patent |
| Language | English |
| Published |
15.08.2023
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A method of manufacturing a semiconductor device is provided. The method includes depositing a non-conductive layer over a semiconductor die. An opening is formed in the non-conductive layer exposing a portion of a bond pad of the semiconductor die. A cavity is in the non-conductive layer with a portion of the non-conductive layer remaining between a bottom surface of the cavity and a bottom surface of the non-conductive layer. A conductive layer is formed over the non-conductive layer and the portion of the bond pad. The conductive layer is configured to interconnect the bond pad with a conductive layer portion over the cavity. |
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| AbstractList | A method of manufacturing a semiconductor device is provided. The method includes depositing a non-conductive layer over a semiconductor die. An opening is formed in the non-conductive layer exposing a portion of a bond pad of the semiconductor die. A cavity is in the non-conductive layer with a portion of the non-conductive layer remaining between a bottom surface of the cavity and a bottom surface of the non-conductive layer. A conductive layer is formed over the non-conductive layer and the portion of the bond pad. The conductive layer is configured to interconnect the bond pad with a conductive layer portion over the cavity. |
| Author | Tay, Sharon Huey Lin Macatangay, Antonio Aguinaldo Marquez Lo, Tsung Nan |
| Author_xml | – fullname: Lo, Tsung Nan – fullname: Tay, Sharon Huey Lin – fullname: Macatangay, Antonio Aguinaldo Marquez |
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| Notes | Application Number: US202117239888 |
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| Snippet | A method of manufacturing a semiconductor device is provided. The method includes depositing a non-conductive layer over a semiconductor die. An opening is... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Semiconductor device under bump structure and method therefor |
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