Semiconductor device under bump structure and method therefor

A method of manufacturing a semiconductor device is provided. The method includes depositing a non-conductive layer over a semiconductor die. An opening is formed in the non-conductive layer exposing a portion of a bond pad of the semiconductor die. A cavity is in the non-conductive layer with a por...

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Bibliographic Details
Main Authors Lo, Tsung Nan, Tay, Sharon Huey Lin, Macatangay, Antonio Aguinaldo Marquez
Format Patent
LanguageEnglish
Published 15.08.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method of manufacturing a semiconductor device is provided. The method includes depositing a non-conductive layer over a semiconductor die. An opening is formed in the non-conductive layer exposing a portion of a bond pad of the semiconductor die. A cavity is in the non-conductive layer with a portion of the non-conductive layer remaining between a bottom surface of the cavity and a bottom surface of the non-conductive layer. A conductive layer is formed over the non-conductive layer and the portion of the bond pad. The conductive layer is configured to interconnect the bond pad with a conductive layer portion over the cavity.
Bibliography:Application Number: US202117239888