Ion implanter and ion implantation method

An ion implanter includes a beam generation device that generates an ion beam with which a workpiece is irradiated, a control device that sets a plurality of operation parameters for controlling an operation of the beam generation device, a measurement device that measures at least one of beam chara...

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Bibliographic Details
Main Authors Kudo, Tetsuya, Yamaguchi, Mikio, Ishibashi, Kazuhisa
Format Patent
LanguageEnglish
Published 15.08.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
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Summary:An ion implanter includes a beam generation device that generates an ion beam with which a workpiece is irradiated, a control device that sets a plurality of operation parameters for controlling an operation of the beam generation device, a measurement device that measures at least one of beam characteristics of the ion beam, a storage device that accumulates data sets in each of which a set of set values of the plurality of operation parameters and a measurement value of the at least one of the beam characteristics of the ion beam are associated with each other, and an analysis device that generates a function for estimating the at least one of the beam characteristics from a set value of at least one of specific parameters included in the plurality of operation parameters, based on a plurality of the data sets accumulated in the storage device.
Bibliography:Application Number: US202217666952