Overlay design for electron beam and scatterometry overlay measurements

Combined electron beam overlay and scatterometry overlay targets include first and second periodic structures with gratings. Gratings in the second periodic structure can be positioned under the gratings of the first periodic structure or can be positioned between the gratings of the first periodic...

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Bibliographic Details
Main Authors Yohanan, Raviv, Naot, Ira, Hajaj, Eitan, Gutman, Nadav, Eyring, Stefan, Steely-Tarshish, Inna, Feler, Yoel, Ghinovker, Mark, Pohlmann, Ulrich, Steely, Chris
Format Patent
LanguageEnglish
Published 08.08.2023
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MATERIALS THEREFOR
MEASURING
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
TESTING
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Summary:Combined electron beam overlay and scatterometry overlay targets include first and second periodic structures with gratings. Gratings in the second periodic structure can be positioned under the gratings of the first periodic structure or can be positioned between the gratings of the first periodic structure. These overlay targets can be used in semiconductor manufacturing.
Bibliography:Application Number: US202117487725