Extreme ultraviolet lithography method, extreme ultraviolet mask and formation method thereof
A method of forming an extreme ultraviolet (EUV) mask includes forming a multilayer Mo/Si stack comprising alternating stacked Mo and Si layers over a mask substrate; forming a ruthenium capping layer over the multilayer Mo/Si stack; doping the ruthenium capping layer with a halogen element, a penta...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
08.08.2023
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Subjects | |
Online Access | Get full text |
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Summary: | A method of forming an extreme ultraviolet (EUV) mask includes forming a multilayer Mo/Si stack comprising alternating stacked Mo and Si layers over a mask substrate; forming a ruthenium capping layer over the multilayer Mo/Si stack; doping the ruthenium capping layer with a halogen element, a pentavalent element, a hexavalent element or combinations thereof; forming an absorber layer over the ruthenium capping layer; and etching the absorber layer to form a pattern in the absorber layer. |
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Bibliography: | Application Number: US202217848139 |