Semiconductor devices

A semiconductor device includes an active pattern on a substrate, a gate structure buried at an upper portion of the active pattern, a bit line structure on the active pattern, a lower spacer structure covering a lower sidewall of the bit line structure, a contact plug structure on the active patter...

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Bibliographic Details
Main Authors Koo, Jamin, Kim, Hyunyong, Um, Minsub, Lee, Sangho, Rhee, Joonkyu, Choi, Yoonyoung, Ahn, Jiyoung, Ahn, Yongseok
Format Patent
LanguageEnglish
Published 01.08.2023
Subjects
ELECTRICITY
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Summary:A semiconductor device includes an active pattern on a substrate, a gate structure buried at an upper portion of the active pattern, a bit line structure on the active pattern, a lower spacer structure covering a lower sidewall of the bit line structure, a contact plug structure on the active pattern and adjacent to the bit line structure, and a capacitor on the contact plug structure. The lower spacer structure includes first and second lower spacers that are sequentially stacked from the lower sidewall of the bit line structure in a horizontal direction that is substantially parallel to an upper surface of the substrate, the first lower spacer includes an oxide, and contacts the lower sidewall of the bit line structure, but does not contact the contact plug structure, and the second lower spacer includes a material different from any of the materials of the first lower spacer.
Bibliography:Application Number: US202117357139