Magnetic tunnel junction and magnetic memory device comprising the same

In one embodiment, the magnetic memory device includes a free layer structure having a variable magnetization direction. The free layer structure includes a first free layer, the first free layer being a first Heusler alloy; a coupling layer on the first free layer, the coupling layer including a me...

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Bibliographic Details
Main Authors Pi, Ung Hwan, Jang, Young Man, Kim, Kwang Seok
Format Patent
LanguageEnglish
Published 18.07.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRICITY
INDUCTANCES
INFORMATION STORAGE
MAGNETS
PHYSICS
SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
STATIC STORES
TRANSFORMERS
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Summary:In one embodiment, the magnetic memory device includes a free layer structure having a variable magnetization direction. The free layer structure includes a first free layer, the first free layer being a first Heusler alloy; a coupling layer on the first free layer, the coupling layer including a metal oxide layer; and a second free layer on the metal oxide layer, the second free layer being a second Heusler alloy, the second Heusler alloy being different from the first Heusler alloy.
Bibliography:Application Number: US202117344206