Method for forming patterned mask layer

A method for forming a patterned mask layer is provided. The method includes forming a first layer over a substrate. The method includes forming a first strip structure and a second strip structure over the first layer. The method includes forming a spacer layer conformally covering the first strip...

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Bibliographic Details
Main Authors Chang, Yu-Chen, Hsiao, Chih-Min, Lai, Chien-Wen
Format Patent
LanguageEnglish
Published 11.07.2023
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for forming a patterned mask layer is provided. The method includes forming a first layer over a substrate. The method includes forming a first strip structure and a second strip structure over the first layer. The method includes forming a spacer layer conformally covering the first strip structure, the second strip structure, and the first layer. The method includes forming a block structure in the first trench. The method includes removing a first portion of the spacer layer, which is under the first trench and not covered by the block structure, and a second portion of the spacer layer, which is over the first strip structure and the second strip structure. The method includes forming a third strip structure in the second trench and the third trench. The method includes removing the block structure. The method includes removing the spacer layer.
Bibliography:Application Number: US202117389602